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IJAT Vol.12 No.2 pp. 179-186
doi: 10.20965/ijat.2018.p0179
(2018)

Paper:

Patterned Sapphire Substrates for III-Nitride Epitaxial Growth

Natsuko Omiya*,†, Hideo Aida*, Yutaka Kimura*, Yuki Kawamata*, Seong-Woo Kim*, and Michio Uneda**

*Namiki Precision Jewel Co. Ltd.
3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan

Corresponding author

**Kanazawa Institute of Technology, Nonoichi, Japan

Received:
July 31, 2017
Accepted:
January 12, 2018
Online released:
March 1, 2018
Published:
March 5, 2018
Keywords:
patterned sapphire substrate, gallium compounds, internal quantum efficiency, light extraction efficiency
Abstract

GaN-based light emitting diodes (LEDs) were epitaxially grown on patterned sapphire substrates (PSSs) to investigate the effectiveness of PSSs for improving the internal quantum efficiency (IQE) and light extraction efficiency (LEE) of the LEDs. Using X-ray diffraction (XRD) and light output measurements, it was observed that the PSSs improved the crystal quality of the LED films and enhanced the LED light intensity. Based on these experimental results, we discuss whether the enhanced light intensity can be attributed to improvements in the IQE or the LEE. The contribution of the IQE improvement to the light intensity was estimated through a comparison of the calculated light emitting area of the LED chip and the measured light output. As a result, it was revealed that the IQE improvement is not the main cause of the increase in the light intensity, indicating that the PSSs mainly improve the LEE. A comparison of the calculated number of bumps on the PSSs and the measured light output of the LEDs suggests that an increase in the number of bumps could affect the improvement in the LEE.

Cite this article as:
N. Omiya, H. Aida, Y. Kimura, Y. Kawamata, S. Kim, and M. Uneda, “Patterned Sapphire Substrates for III-Nitride Epitaxial Growth,” Int. J. Automation Technol., Vol.12, No.2, pp. 179-186, 2018.
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Last updated on Sep. 20, 2018