IJAT Vol.12 No.2 pp. 175-178
doi: 10.20965/ijat.2018.p0175


Potential and Challenges of Diamond Wafer Toward Power Electronics

Shinichi Shikata

Kwansei Gakuin University
2-1 Gakuen, Sanda, Hyogo 663-1337, Japan

Corresponding author

June 12, 2017
November 16, 2017
Online released:
March 1, 2018
March 5, 2018
diamond, machining, wide bandgap

To achieve a 50% worldwide reduction of CO2 by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.

Cite this article as:
S. Shikata, “Potential and Challenges of Diamond Wafer Toward Power Electronics,” Int. J. Automation Technol., Vol.12 No.2, pp. 175-178, 2018.
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