IJAT Vol.12 No.2 pp. 170-174
doi: 10.20965/ijat.2018.p0170


Surface Planarization with Gas Cluster Ion Beams and Application to Wide-Bandgap Semiconductors

Noriaki Toyoda

Graduate School of Engineering, University of Hyogo
2167 Shosha, Himeji, Hyogo 671-2280, Japan

Corresponding author

March 31, 2017
October 25, 2017
Online released:
March 1, 2018
March 5, 2018
gas cluster ion beams, surface planarization, wide bandgap semiconductor, low-damage

In this study, the fundamental sputtering effects of gas cluster ion beams (GCIBs), especially for surface planarization, are reported. Because gas cluster ions are aggregates of thousands of gas atoms, the collision process for a GCIB, with dense and multiple collisions, differs from that of atomic ions via collision cascading; thus, GCIBs have many unique irradiation effects. Among them, the low-damage and surface smoothing effects are beneficial for the planarization of wide-bandgap semiconductor wafers. The planarization of SiC, diamond, and GaN has been demonstrated using GCIB irradiation.

Cite this article as:
N. Toyoda, “Surface Planarization with Gas Cluster Ion Beams and Application to Wide-Bandgap Semiconductors,” Int. J. Automation Technol., Vol.12 No.2, pp. 170-174, 2018.
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