Line Patterning with Microparticles at Different Positions in a Single Device Based on Negative Dielectrophoresis
Tomoyuki Yasukawa, Yusuke Yoshida, Hironobu Hatanaka,
and Fumio Mizutani
Graduate School of Material Science, University of Hyogo, 3-2-1 Kouto, Kamigori, Ako, Hyogo 678-1297, Japan
We report on control of line pattern positioning with particles fabricated by negative dielectrophoresis (n-DEP) using the applied intensity and phase of an AC electric field. Line patterns were fabricated in a microfluidic device consisting of upper conductive indium-tin-oxide (ITO) substrates and lower ITOinterdigitated microband array (IDA) electrodes used as the template. A 6-µm-diameter polystyrene particles suspension was introduced into the device between upper ITO and the bottom ITO-IDA substrate. An AC electric signal of a typically 20 peak-to-peak voltage and 1.0 MHz was then applied to upper ITO and bands on lower IDA, resulting in the formation of line patterns with low electric-field gradient regions. AC voltage was applied to bands A and B on lower IDA with the opposite phase and the same frequency and intensity. When the signal identical to band A was applied to upper ITO, particles were aligned above band A because relatively lower electric fields were produced in these regions. In contrast, the application of a signal identical to band B formed line patterns with particles aligned above band B due to the generation of a strong electric field between band A and upper ITO and the disappearance of the strong electric field between band B and upper ITO. The decrease in applied intensity to upper ITO shifted the accumulated position of particles to the center between bands A and B because of the balance of electric fields generated between band A or B and upper ITO. We thus fabricated line patterns with particles at desired positions in the fluidic device.
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