In the strategy we propose for lithography using a microelectronic mask, the overlay intensity basis is defined taking into account instantaneous distributions of optical energy through the microelectronic mask from a micromirror onto a scrolling substrate. The microelectronic mask involves transfer of patterns as optical energy. We implemented a prototype lithography simulation system for generating lithographic data and predicting optomechatronic results. To ensure feasibility, we conducted lithography using a microelectronic mask on prototype equipment to fabricate actual wafers parallel to simulation. Results of simulation and experiments confirmed consistency both physically and mathematically. The appropriateness of the devised method, the precision of the implemented system, and the capability of pattern size control adjusting the occupancy limit without data modification have thus been confirmed.

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