Lithography Using a Microelectronic Mask
Manseung Seo*, Haeryung Kim*, and Masahiko Onosato**
*Department of Robot System Engineering, College of Engineering, Tongmyong University, 535 Yongdang-dong, Nam-gu, Busan 608-711, Korea
**Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, Hokkaido 060-0814, Japan
In the strategy we propose for lithography using a microelectronic mask, the overlay intensity basis is defined taking into account instantaneous distributions of optical energy through the microelectronic mask from a micromirror onto a scrolling substrate. The microelectronic mask involves transfer of patterns as optical energy. We implemented a prototype lithography simulation system for generating lithographic data and predicting optomechatronic results. To ensure feasibility, we conducted lithography using a microelectronic mask on prototype equipment to fabricate actual wafers parallel to simulation. Results of simulation and experiments confirmed consistency both physically and mathematically. The appropriateness of the devised method, the precision of the implemented system, and the capability of pattern size control adjusting the occupancy limit without data modification have thus been confirmed.
-  D. Dudley, W. Duncan, and J. Slaughter, “Emerging digital micromirror device (DMD) applications,” Proceedings of the International Society for Optical Engineering, Vol.4985, 2003.
-  R. Hofling and E. Ahl, “ALP: universal micromirror controller for metrology and testing,” Proceedings of the International Society for Optical Engineering, 5289, 2004.
-  W. Mei, T. Kanatake, and A. Ishikawa, “Moving exposure system and method for maskless lithography system,” U.S. Patent No.6, 379, 867 B1, 2002.
-  W. Mei, “Point array maskless lithography,” U.S. Patent No.6, 473, 237 B2, 2002.
-  A. Beeker, W. Cebuhar, J. Kreuzer, A. Latypov, and Y. Vladimirsky, “Methods and Systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap of exposure zones with attenuation of the aerial image in the overlap region,” U.S. Patent No.6, 876, 440 B1, 2005.
-  K. F. Chan, Z. Feng, R. Yang, A. Ishikawa, and W. Mei, “Highresolution maskless lithography,” Journal of Microlithography, Microfabrication, and Microsystems, Vol.12, No.4, p. 331, 2003.
-  T. Kanatake, “High resolution point array,” U.S. Patent No.6870604 B2, 2005.
-  M. Seo and H. Kim, “Occupancy based pattern generation method for maskless lithography,” Patent pending in Korea, Application Pub.No.10-2005-0114003, 2005.
This article is published under a Creative Commons Attribution-NoDerivatives 4.0 Internationa License.
Copyright© 2006 by Fuji Technology Press Ltd. and Japan Society of Mechanical Engineers. All right reserved.