JRM Vol.18 No.6 pp. 816-823
doi: 10.20965/jrm.2006.p0816


Lithography Using a Microelectronic Mask

Manseung Seo*, Haeryung Kim*, and Masahiko Onosato**

*Department of Robot System Engineering, College of Engineering, Tongmyong University, 535 Yongdang-dong, Nam-gu, Busan 608-711, Korea

**Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, Hokkaido 060-0814, Japan

March 31, 2006
June 26, 2006
December 20, 2006
microelectronic mask, optomechatronic process, lithography simulation
In the strategy we propose for lithography using a microelectronic mask, the overlay intensity basis is defined taking into account instantaneous distributions of optical energy through the microelectronic mask from a micromirror onto a scrolling substrate. The microelectronic mask involves transfer of patterns as optical energy. We implemented a prototype lithography simulation system for generating lithographic data and predicting optomechatronic results. To ensure feasibility, we conducted lithography using a microelectronic mask on prototype equipment to fabricate actual wafers parallel to simulation. Results of simulation and experiments confirmed consistency both physically and mathematically. The appropriateness of the devised method, the precision of the implemented system, and the capability of pattern size control adjusting the occupancy limit without data modification have thus been confirmed.
Cite this article as:
M. Seo, H. Kim, and M. Onosato, “Lithography Using a Microelectronic Mask,” J. Robot. Mechatron., Vol.18 No.6, pp. 816-823, 2006.
Data files:
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Last updated on May. 19, 2024