Nondestructive Inline Inspection of Through-Silicon Vias Based on X-Ray Imaging and its Uncertainty Budget

Yasutoshi Umehara; Nobuyuki Moronuki

doi:10.20965/ijat.2019.p0289

single-au.php

« previous

IJAT Vol.13 No.2 pp. 289-300

doi: 10.20965/ijat.2019.p0289

(2019)

Paper:

Views over last 60 days: 993

Nondestructive Inline Inspection of Through-Silicon Vias Based on X-Ray Imaging and its Uncertainty Budget

Yasutoshi Umehara^*,† and Nobuyuki Moronuki^**

^*Tokyo Electron Limited
2-30-7 Sumiyoshi-cho, Fuchu City, Tokyo 183-8705, Japan

^†Corresponding author

^**Faculty of System Design, Tokyo Metropolitan University, Hino, Japan

Received:

April 4, 2018

Accepted:

September 23, 2018

Published:

March 5, 2019

Keywords:

TSV, nanofocus X-ray, projection image, nondestructive inspection, uncertainty

Abstract

Nanofocus X-ray projection imaging technology with a resolution of 0.25 μm has been developed and applied to the estimation of the profile of through-silicon vias (TSVs) several microns in diameter. However, analysis and examination of the uncertainty of the system and the calibration method for measurement have not been properly discussed thus far. These topics should be discussed in consideration of the actual application of the method to the automation of inline inspection and the measurement processes of TSV devices. This study focuses on the quantitative analysis of the uncertainty budget in the measurement of the whole X-ray microscope system. A calibration method using a known, conventionally defined TSV sample as a calibration device is employed. The uncertainties are divided into calibration, mechanical, electrical, and algorithmic factors, and their contributions to the combined standard uncertainty and the expanded uncertainty are estimated. An actual case for the analysis of the uncertainty budget is evaluated, where the profile is estimated for actual images with a signal-to-noise ratio of 2.2.

Cite this article as:

Y. Umehara and N. Moronuki, “Nondestructive Inline Inspection of Through-Silicon Vias Based on X-Ray Imaging and its Uncertainty Budget,” Int. J. Automation Technol., Vol.13 No.2, pp. 289-300, 2019.

Data files:

References

[1] V. H. Vartanian, R. A. Allen, L. Smith, K. Hummler, S. Olson, and B. C. Sapp, “Metrology needs for through-silicon via fabrication,” J. Micro/Nanolith MEMS MOEMS, Vol.13, No.1, p. 011206, doi: 10.1117/1.JMM.13.1.011206, 2014.
[2] L. W. Kong, P. Krueger, E. Zshcen, A. C. Rudack, S. Arkalgud, and A. C. Diebold, “Sub-Imaging Techniques For 3D-Interconnects on bonded wafer pairs,” AIP Conf. Proc., Vol.1300, p. 221, 2010.
[3] H. Fujimoto, M. Abe, S. Osawa, O. Sato, and T. Tkatsuji, “Development of Dimensional X-ray Computed Tomography,” Int. J. Automation Technol., Vol.9, No.5, pp. 567-571, 2015.
[4] D. H. Larsson, P. A. Takman, U. Lungstrom, A. Burvali, and H. M. Hertz, “A 24keV liquid-metal-jet x-ray source for biomedical applications,” Rev. Sci. Instrum, p. 123701, 2011.
[5] M. Feser, J. Gelb, H. Chang, H. Cui, F. Duewer, S. H. Lau, A. Tkachuk, and W. Yun, “Sub-micron resolution CT for failure analysis and process development,” Measurement Science and Technology, Vol.19, No.9, p. 094001, doi: 10.1088/0957-0233/19/9/094001, 2008.
[6] Hamamatsu Photonics K.K., Tokyo Electron Ltd. NEDO reports, No.20120000000877, 2012 (in Japanese).
[7] Bruker micro CT SkyScan2011 x-ray nanotomograph product description webpage, http://bruker-microct.com/products/2011.htm [Accessed May 3, 2017].
[8] Y. Umehara and N. Moronuki, “Simple 3D Measurement of Through-Silicon Vias by Analyzing Projection Images of Nano-Focus X-ray Microscope – Principle and evaluation of error –,” J. of the Japan Society for Precision Engineering, Vol.82, No.10, pp. 901-906, doi: 10.2493/jjspe.82.901, 2016 (in Japanese).
[9] Y. Umehara and W. Jin, “Unique nondestructive inline metrology of TSVs by X-ray with model based library method,” Proc. Interconnect Technology Conf. (IITC/AMC), San Jose, pp. 233-236, doi: 10.1109/IITC.2014.6831877, 2014.
[10] Y. Umehara and N. Moronuki, “A sinple 3D profile estimation of through-silicon vias (TSVs) based on an X-ray projection image and its robustness evaluation,” Proc. Int. Conf. on Precision Engineering (ICPE), A316-8186, 2016.
[11] S. Zabler, T. Ebensperger, C. Fella, and R. Hanke, “High-resolution X-ray imaging for lab-based materials research,” Conf. on Industrial Computed Tomography (ICT), Wels, Austria., pp. 117-127, 2012.
[12] M. Nohri, A. Rostamizadeh, and A. Talwalker, “Foundations of Machine learning,” The MIT press, 2012.
[13] B. Schölkopf, A. J. Smola, R. J. Williamson, and P. L. Bartlett, “New support vector algorithms,” Neural Computation, Vol.12, pp. 1207-1245, doi: 10.1162/089976600300015565, 2000.
[14] C. C. Chang and C. J. Lin, “LIBSVM: a library for support vector machines,” ACM Trans. on Intelligent Systems and Technology, 2:27:1-27:27, doi: 10.1145/ 1961189.1961199, 2011.
[15] R. S. Figliola and D. E. Beasley, “Theory and design for mechanical measurements,” John Wiley and Sons, pp. 161-200, doi:10.1080/03043799508928292, 2006.
[16] JCGM 100:2008, Evaluation of measurement data- Guide to the expression of uncertainty in measurement, 2008.
[17] M. Hiroguchi and Y. Koike, “Submicron Dimension Measurement by SEM,” CREATIVE, Vol.5, pp. 61-66, 2005 (in Japanese).
[18] R. Beica, C. Sharbono, and T. Ritzdorf, “Copper Electrodeposition for 3D Integration,” DTIP of MEMS & MOEMS, doi: 10.1109/DTIP.2008.4752967, 2008.
[19] H. C. Kim, S. Choe, J. Y. Cho, D. Lee, I. Jung, W. Cho, M. J. Kim, and J. J. Kim, “Bottom-up Filling of through Silicon Vias Using Galvanostatic Cu Electrodeposition with the Modified Organic Additives,” J. of The Electrochemical Society, Vol.162, No.3, pp. 109-114, 2015.
[20] P. Duvauchelle, N. Freud, V. Kaftandjian, and D. Babot, “A computer code to simulate X-ray imaging techniques. Nuclear Instruments and Methods,” Physical Research Section B: Beam interactions with Materials and Atoms, Vol.170, pp. 245-258, doi: 10.1016/S0168-583X(00)00185-3, 2000.

This article is published under a Creative Commons Attribution-NoDerivatives 4.0 Internationa License.

[1] [1] V. H. Vartanian, R. A. Allen, L. Smith, K. Hummler, S. Olson, and B. C. Sapp, “Metrology needs for through-silicon via fabrication,” J. Micro/Nanolith MEMS MOEMS, Vol.13, No.1, p. 011206, doi: 10.1117/1.JMM.13.1.011206, 2014.

[2] [2] L. W. Kong, P. Krueger, E. Zshcen, A. C. Rudack, S. Arkalgud, and A. C. Diebold, “Sub-Imaging Techniques For 3D-Interconnects on bonded wafer pairs,” AIP Conf. Proc., Vol.1300, p. 221, 2010.

[3] [3] H. Fujimoto, M. Abe, S. Osawa, O. Sato, and T. Tkatsuji, “Development of Dimensional X-ray Computed Tomography,” Int. J. Automation Technol., Vol.9, No.5, pp. 567-571, 2015.

[4] [4] D. H. Larsson, P. A. Takman, U. Lungstrom, A. Burvali, and H. M. Hertz, “A 24keV liquid-metal-jet x-ray source for biomedical applications,” Rev. Sci. Instrum, p. 123701, 2011.

[5] [5] M. Feser, J. Gelb, H. Chang, H. Cui, F. Duewer, S. H. Lau, A. Tkachuk, and W. Yun, “Sub-micron resolution CT for failure analysis and process development,” Measurement Science and Technology, Vol.19, No.9, p. 094001, doi: 10.1088/0957-0233/19/9/094001, 2008.

[6] [6] Hamamatsu Photonics K.K., Tokyo Electron Ltd. NEDO reports, No.20120000000877, 2012 (in Japanese).

[7] [7] Bruker micro CT SkyScan2011 x-ray nanotomograph product description webpage, http://bruker-microct.com/products/2011.htm [Accessed May 3, 2017].

[8] [8] Y. Umehara and N. Moronuki, “Simple 3D Measurement of Through-Silicon Vias by Analyzing Projection Images of Nano-Focus X-ray Microscope – Principle and evaluation of error –,” J. of the Japan Society for Precision Engineering, Vol.82, No.10, pp. 901-906, doi: 10.2493/jjspe.82.901, 2016 (in Japanese).

[9] [9] Y. Umehara and W. Jin, “Unique nondestructive inline metrology of TSVs by X-ray with model based library method,” Proc. Interconnect Technology Conf. (IITC/AMC), San Jose, pp. 233-236, doi: 10.1109/IITC.2014.6831877, 2014.

[10] [10] Y. Umehara and N. Moronuki, “A sinple 3D profile estimation of through-silicon vias (TSVs) based on an X-ray projection image and its robustness evaluation,” Proc. Int. Conf. on Precision Engineering (ICPE), A316-8186, 2016.

[11] [11] S. Zabler, T. Ebensperger, C. Fella, and R. Hanke, “High-resolution X-ray imaging for lab-based materials research,” Conf. on Industrial Computed Tomography (ICT), Wels, Austria., pp. 117-127, 2012.

[12] [12] M. Nohri, A. Rostamizadeh, and A. Talwalker, “Foundations of Machine learning,” The MIT press, 2012.

[13] [13] B. Schölkopf, A. J. Smola, R. J. Williamson, and P. L. Bartlett, “New support vector algorithms,” Neural Computation, Vol.12, pp. 1207-1245, doi: 10.1162/089976600300015565, 2000.

[14] [14] C. C. Chang and C. J. Lin, “LIBSVM: a library for support vector machines,” ACM Trans. on Intelligent Systems and Technology, 2:27:1-27:27, doi: 10.1145/ 1961189.1961199, 2011.

[15] [15] R. S. Figliola and D. E. Beasley, “Theory and design for mechanical measurements,” John Wiley and Sons, pp. 161-200, doi:10.1080/03043799508928292, 2006.

[16] [16] JCGM 100:2008, Evaluation of measurement data- Guide to the expression of uncertainty in measurement, 2008.

[17] [17] M. Hiroguchi and Y. Koike, “Submicron Dimension Measurement by SEM,” CREATIVE, Vol.5, pp. 61-66, 2005 (in Japanese).

[18] [18] R. Beica, C. Sharbono, and T. Ritzdorf, “Copper Electrodeposition for 3D Integration,” DTIP of MEMS & MOEMS, doi: 10.1109/DTIP.2008.4752967, 2008.

[19] [19] H. C. Kim, S. Choe, J. Y. Cho, D. Lee, I. Jung, W. Cho, M. J. Kim, and J. J. Kim, “Bottom-up Filling of through Silicon Vias Using Galvanostatic Cu Electrodeposition with the Modified Organic Additives,” J. of The Electrochemical Society, Vol.162, No.3, pp. 109-114, 2015.

[20] [20] P. Duvauchelle, N. Freud, V. Kaftandjian, and D. Babot, “A computer code to simulate X-ray imaging techniques. Nuclear Instruments and Methods,” Physical Research Section B: Beam interactions with Materials and Atoms, Vol.170, pp. 245-258, doi: 10.1016/S0168-583X(00)00185-3, 2000.

Nondestructive Inline Inspection of Through-Silicon Vias Based on X-Ray Imaging and its Uncertainty Budget

Yasutoshi Umehara*,† and Nobuyuki Moronuki**

Yasutoshi Umehara^*,† and Nobuyuki Moronuki^**