single-au.php

IJAT Vol.13 No.2 pp. 237-245
doi: 10.20965/ijat.2019.p0237
(2019)

Paper:

Study on Polishing Characteristics of Pyramidal Structured Polishing Pad

Ryunosuke Sato*,† and Yoshio Ichida**

*Graduate School of Engineering, Utsunomiya University
7-1-2 Yoto, Utsunomiya, Tochigi 321-8585, Japan

Corresponding author

**CBN & Diamond Nanomachining Institute, Utsunomiya, Japan

Received:
July 30, 2018
Accepted:
January 17, 2019
Published:
March 5, 2019
Keywords:
pyramidal structured polishing pad, polishing characteristics, true polishing pressure, removal rate, surface roughness
Abstract

We conducted a polishing test to clarify the change in polishing characteristics resulting from the wear of a pyramidal-structured polishing tool, and discuss the polishing mechanism unique to the pyramidal-structured polishing pad. When the pyramidal-structured polishing pad is used for polishing, there exists an initial polishing stage in which the removal rate is high but the finished surface is rough; followed by a steady-state polishing stage in which the wear rate is low, removal rate is stable, and a high-quality finish is obtained. The true polishing pressure is constant in the steady-state polishing stage regardless of the nominal polishing pressure, although it differs with workpiece hardness. Polishing was carried out using the pyramidal-structured polishing pad containing 6 μm alumina abrasive grains for 90 min without any scorching or clogging. This resulted in finished surfaces of 0.4 μm Rz and 0.07 μm Rz for oxygen-free copper and S45C, respectively.

Cite this article as:
R. Sato and Y. Ichida, “Study on Polishing Characteristics of Pyramidal Structured Polishing Pad,” Int. J. Automation Technol., Vol.13 No.2, pp. 237-245, 2019.
Data files:
References
  1. [1] T. Ito and K. Morishige, “Polishing process automation by industrial robots with polished surface quality judged based on imaging processing,” Int. J. Automation Technol., Vol.3, No.2, pp. 130-135, 2009.
  2. [2] Y. Ueki, K. Morishige, T. Ishida, and Y. Takeuchi, “Automation of polishing process by industrial robots – polishing path generation in consideration of surface curvature –,” J. of the Japan Society for Precision Engineering, Vol.70, pp. 1522-1526, 2004.
  3. [3] F. Nagata and K. Watanabe, “Feed rate control using fuzzy reasoning for a mold polishing robot,” J. Robot. Mechatron., Vol.18, No.1, pp. 76-82, 2006.
  4. [4] K. Shibuya and S. Issiki, “Evaluation of metallic mold surfaces polished by an industrial robot with stick whetstones,” Int. J. Automation Technol., Vol.8, No.2, pp. 253-263, 2014.
  5. [5] F. Nagata, K. Watanabe, S. Hashino, H. Tanaka, T. Matsuyama, and K. Hara, “Polishing robot using joystick controlled teaching,” J. Robot. Mechatron., Vol.13, No.5, pp. 517-525, 2001.
  6. [6] T. Kusumi, Y. Sato, H. Ikeda, Y. Akagami, and N. Umehara, “The development of AC electric field assisted polishing for silicon carbide substrates with control of abrasive behavior – Clarification of improvement mechanism for polishing rate with electric field –,” J. of the Japan Society for Precision Engineering, Vol.79, pp. 87-92, 2013.
  7. [7] T. Sakamoto, A. Kubota, and M. Touge, “Ultraviolet-assisted polishing of 2 inch SiC substrate,” J. of Japan Society for Abrasive Technology, Vol.57, pp. 524-529, 2013.
  8. [8] T. Kurita, K. Miyake, K. Kawata, K. Ashida, and T. Kato, “Development of new combined polishing process for single crystal silicon carbide,” J. of Japan Society for Abrasive Technology, Vol.58, pp. 30-35, 2014.
  9. [9] M. Uneda, K. Takano, K. Koyama, H. Aida, and K. Ishikawa, “Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher,” Int. J. Automation Technol., Vol.9, No.5, pp. 573-579, 2015.
  10. [10] T. Doi, “Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices,” Int. J. Automation Technol., Vol.12, No.2, pp. 145-153, 2018.
  11. [11] P. Van Bui, Y. Sano, Y. Morikawa, and K. Yamauchi, “Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC,” Int. J. Automation Technol., Vol.12, No.2, pp. 154-159, 2018.
  12. [12] T. Tanaka, M. Takizawa, and A. Hata, “Verification of the Effectiveness of UV-Polishing for 4H-SiC Wafer Using Photocatalyst and Cathilon,” Int. J. Automation Technol., Vol.12, No.2, pp. 160-169, 2018.
  13. [13] S. Kishii, R. Suzuki, A. Ohishi, and Y. Arimoto, “Completely planarized W plugs using MnO2 CMP,” Proc. of 1995 IEEE Int. Electron Device Meeting Technical Digest, pp. 465-468, 1995.
  14. [14] T. Doi, M. Uneda, and T. Funakoshi, “CMP slurry recycle technique and its impact,” J. of Japan Society for Abrasive Technology, Vol.56, pp. 364-367, 2012.
  15. [15] N. Yasunaga, “The latest trend of advanced fixed abrasive finishing methods,” J. of Japan Society for Abrasive Technology, Vol.53, No.7, pp. 401-404, 2009.
  16. [16] H. Ohmori , W. Lin, Y. Uehara, Y. Watanabe, S. Morita, T. Suzuki, and K. Katahira, “Nanoprecision micromechanical fabrication,” Int. J. Automation Technol., Vol.2, No.1, pp. 24-33, 2008.
  17. [17] H. Ohmori and Y. Uehara, “Development of a desktop machine tool for mirror surface grinding,” Int. J. Automation Technol., Vol.4, No.2, pp. 88-96, 2010.
  18. [18] L. Zhou, H. Eda, J. Shimizu, S. Kamiya, H. Iwase, S. Kimura, and H. Sato, “Defect-free Fabrication for Single Crystal Silicon Substrate by Chemo-Mechanical Grinding,” CIRP Annals, Vol.55, Issue 1, pp. 213-316, 2006.
  19. [19] H. Shibutani, T. Fukazawa, N. Fuwa, J. Ikeno, H. Suzuki, and O. Horiuchi, “Grinding Performance of Thin-Plate Silica EPD Pellet to Silicon Wafer,” Trans. of the Japan Society of Mechanical Engineers Series C, Vol.68, Issue 673, pp. 2791-2796, 2002.
  20. [20] K. Ohashi, R. Nishikawa, S. Tsukamoto, N. Tada, and T. Nakajima, “Improving process of surface roughness with super-soft grade resinoid bond wheel (2nd report) – grinding method based on the minimizing phenomenon of surface roughness –,” J. of the Japan Society for Precision Engineering, Vol.70, pp. 1291-1295, 2004.
  21. [21] A. Takata, K. Jodan, Y. Tsuruta, K. Matsumaru, and K. Ishizaki, “The technology of fixed abrasive polishing by special diamond grinding wheels,” J. of Japan Society for Abrasive Technology, Vol.53, pp. 413-416, 2009.
  22. [22] M. Uneda, K. Ishikawa, and H. Suwabe, “Grinding simulation with diamond pellets and optimization of layout method of pellets using genetic algorithm,” J. of the Japan Society for Precision Engineering, Vol.71, pp. 644-648, 2005.
  23. [23] S. Katagiri, K. Yasui, U. Yamaguchi, Y. Kawamura, R. Kawai, F. Kanai, M. Tokuda, M. Honda, and S. Moriyama, “Study on STI planarization process using fixed abrasive tool (1st Report) – Factor analysis to obtain flatter surface –,” J. of the Japan Society for Precision Engineering, Vol.70, No.5, pp. 128-132, 2004.
  24. [24] Y. Wu, W. Yang, M. Fujimoto, and L. Zhou, “Mirror surface finishing of silicon wafer edge using ultrasonic assisted fixed-abrasive CMP (UF-CMP),” Int. J. Automation Technol., Vol.7, No.6, pp. 663-670, 2013.
  25. [25] S. Higuchi and N. Tajima, “Grinding performance of structured abrasive belt,” J. of Japan Society for Abrasive Technology, Vol.47, pp. 153-158, 2003.
  26. [26] H. Hashimoto and T. Yamada, “Shinpen Kikaikakougaku,” Kyoritsu Shuppan Co., Ltd., p. 126, 1990 (in Japanese).

*This site is desgined based on HTML5 and CSS3 for modern browsers, e.g. Chrome, Firefox, Safari, Edge, Opera.

Last updated on Apr. 22, 2024