IJAT Vol.13 No.2 pp. 230-236
doi: 10.20965/ijat.2019.p0230


Surface Finishing of Single-Crystal SiC and GaN Wafers Using a Magnetic Tool in H2O2 Solution

Akihisa Kubota

Kumamoto University
2-39-1 Kurokami, Chuo-ku, Kumamoto City, Kumamoto 860-8555, Japan

Corresponding author

July 26, 2018
January 30, 2019
March 5, 2019
SiC, GaN, surface smoothing, OH radical, abrasive Fe

To remove the microroughness and subsurface damage on the SiC and GaN surface efficiently, a surface finishing technique using a magnetic tool holding iron particles in a hydrogen peroxide solution is developed. This technique utilizes OH radicals generated from the iron catalytic particles in a hydrogen peroxide solution, and can be used to preferentially remove the topmost convex part on the surface, resulting in an atomically smooth surface. We employed this polishing technique to finish the surfaces of 2-inch SiC and 2-inch GaN wafers. The surface roughness before and after finishing was measured by scanning white light interferometric microscopy and atomic force microscopy. In addition, the material removal rate was calculated by weight loss due to the finishing process. The results show that the surface roughness on the SiC and GaN wafers is markedly improved. Moreover, the surface waviness and flatness of these wafers before and after finishing did not deteriorate. Atomic force microscope images indicate that an atomically flat SiC surface with a roughness value below 0.1 nm RMS and a GaN surface with atomic step and terrace structures were achieved. Our proposed finishing technique is effective in improving the surface microroughness of SiC and GaN wafers.

Cite this article as:
A. Kubota, “Surface Finishing of Single-Crystal SiC and GaN Wafers Using a Magnetic Tool in H2O2 Solution,” Int. J. Automation Technol., Vol.13, No.2, pp. 230-236, 2019.
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Last updated on Mar. 14, 2019