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IJAT Vol.9 No.5 pp. 573-579
doi: 10.20965/ijat.2015.p0573
(2015)

Paper:

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Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher

Michio Uneda*, Keiichi Takano*, Koji Koyama**, Hideo Aida**, and Ken-ichi Ishikawa*

*Kanazawa Institute of Technology
7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan

**Namiki Precision Jewel Co., Ltd.
3-8-22 Shin-den, Adachi, Tokyo 123-8511, Japan

Received:
February 3, 2015
Accepted:
July 13, 2015
Published:
September 5, 2015
Creative Commons License
Keywords:
chemical mechanical polishing, hard-to-process materials, removal rate, slurry flow between wafer and polishing pad during CMP, polisher vibration acceleration
Abstract
Chemical mechanical polishing (CMP) is one of the most important processes for fabricating highly planarized substrates such as sapphire for light emitting diodes (LEDs). However, sapphire is categorized as a hard-to-process material; therefore, a long processing time is required because of the low polishing efficiency (i.e., removal rate). This study investigates the CMP mechanism for hard-to-process materials using the following polishing evaluation parameters: (1) the velocity ratio, which is defined as the ratio of slurry flow velocity between the wafer and polishing pad during CMP to the pad tangential velocity, (2) the standard deviation of the velocity ratio distribution, and (3) the polisher vibration acceleration during CMP. Each parameter was measured at five rotational speeds and two polishing pressures for a total of ten conditions using a commercially available single-sided polisher. Moreover, the influence of each parameter on the removal rate was demonstrated via a multiple correlation analysis. As a result, we revealed that the velocity ratio and polisher vibration acceleration are strongly related with the removal rate.
Cite this article as:
M. Uneda, K. Takano, K. Koyama, H. Aida, and K. Ishikawa, “Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher,” Int. J. Automation Technol., Vol.9 No.5, pp. 573-579, 2015.
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References
  1. [1] H. Aida, T. Doi, H. Takeda, H. Katakura, S.-W. Kim, K. Koyama, T. Yamazaki, and M. Uneda, “Ultraprecision CMP for sapphire, GaN and SiC for advanced optoelectronics materials,” Current Applied Physics, Vol.12, pp. 41-46, 2012.
  2. [2] I. P. Smirnova, L. K. Markov, D. A. Zakheim, E. M. Arakcheeva, and M. R. Rymalis, “Blue Flip-Chip AlGaInN LEDs with Removed Sapphire Substrate,” Semiconductors, Vol.40, No.11, pp. 1363-1367, 2006.
  3. [3] K. Qin, B. Moudgil, and C.-W. Park, “A chemical mechanical Polishing model incorporating both the chemical and mechanical effects,” ELSEVIER Thin Solid Films, Vol.446, pp. 227-286, 2004.
  4. [4] Y.-R. Jjeng, P.-Y. Huang, and W.-C. Pan, “Tribological Analysis of CMP with Partial Asperity Contact,” J. of The Electrochemical Society, Vol.150, No.10, pp. 630-637, 2003.
  5. [5] I.-H. Sung, H. J. Kim, and C. D. Yeo, “First observation on the feasibility of scratch formation by pad-particle mixture in CMP process,” Applied Surface Science, Vol.258, pp. 8298-8306, 2012.
  6. [6] E. J. Terrell and C. F. Higgs III, “Hydrodynamics of Slurry Flow in Chemical Mechanical Polishing,” J. of The Electrochemical Society, Vol.153, No.6, pp. K15-K22, 2006.
  7. [7] M. Uneda, Y. Fukuta, K. Yokogawa, K. Hotta, H. Sugiyama, K. Tamai, H. Morinaga, and K.-I. Ishikawa, “Effects of slurry flow sapphire-chemical mechanical polishing,” J. of the japan Society for Abrasive Technology, Vol.58, No.9, pp. 583-588, 2014 (in Japanese).
  8. [8] M. Uneda, Y. Takahashi, K. Shibuya, Y. Nakamura, D. Ichikawa, and K.-I. Ishikawa, “Relationships Between Removal Rate, Pad Surface Asperity and Polishing Head Vibration in Si-CMP,” Proc. of Int. Conf. on Planarization/CMP Technology 2013, P06, pp. 214-217, 2013.
  9. [9] Z.-C. Lin and W.-S. Huang, “A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads,” J. of Mechanical Science and Technology, Vol.26, No.8, pp. 2353-2364, 2012.
  10. [10] G. Keppel and S. Zedeck, “Data analysis for research designs,” W. H. Freeman and Company, pp. 126-127, 1989.
  11. [11] W. Xu, X. Lu, G. Pan, Y. Lei, and J. Luo, “Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate,” ELSEVIER Applied Surface Science, Vol.256, pp. 3936-3940, 2010.
  12. [12] B. Park, S. Jeong, H. Lee, H. Kim, H. Jeong, and D. A. Dornfeld, “Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing,” Japanese J. of Applied Physics, Vol.48, No.116505, pp. 1-9, 2009.
  13. [13] X. Han, Y. Hu, and S. Yu, “Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method,” Applied Physics, A, Vol.95, pp. 899-905, 2009.
  14. [14] Y. Moon, “Mechanical Aspects of the Material Removal Mechanism in Chemical Mechanical Polishing (CMP),” University of California, Berkeley, p. 69, 1999.

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Last updated on Apr. 22, 2024