The experimentally observing optical systems for on-machine measurement have been developed to study on nano-polishing phenomena during the chemical mechanical polishing process, which is a wet process in semiconductor manufacturing. The developed optical system employs an evanescent field to selectively enhance exclusively the observatory of phenomena occurring on the surface being polished, offering a lateral resolving power of approximately 400 nm, in the slurry concentration of up to 5 wt% based on the numerical aperture of the objective lens. In addition, there is also the observability of 105 nm and down to 55 nm-sized silica particles without requiring additive fluorescence agents in or around the nano-particles, even when these particles are moving on surfaces such as silica glass or hard materials (silicon carbide: 4H-SiC). Consequently, the motion behavior of nano-particles disjoining with polishing pad asperity was explored and discussed, in this paper. Experimental results revealed that the polishing pad spatially constrains the movement of particles between the pad and the substrate surface, guiding them toward the surface being polished. During pad sliding, fluidically dragged nano-particles exhibit slower movement than the polishing pad sliding speed while retaining the Brownian motion. Furthermore, 105 nm-sized silica particles did not continuously approach to attach onto the SiC surface; the nano-particles approached in steps with reduced Brownian motion in all directions before attaching. This behavior can be attributed to the effects of van der Waals attraction and electrostatic repulsion forces between the particle and the substrate surfaces.

1. [1] F. W. Preston, “The Theory and Design of Plate Glass Polishing Machines,” J. Society of Glass Tech., Vol.11, pp. 214-256, 1927.
2. [2] L. M. Cook, “Chemical Process in Glass Polishing,” J. Non-Crystalline Solids, Vol.120, Nos.1-3, pp. 152-171, 1990. https://doi.org/10.1016/0022-3093(90)90200-6
3. [3] S. V. Babu, S. Dynuluk, M. Krishnan, and M. Tsujimura, “Chemical Mechanical Polishing – Fundamental and Challenges: Vol.566,” Materials Research Society, 1999.
4. [4] T. Doi, I. D. Marinescu, and S. Kurokawa, “Advances in CMP Polishing Technologies,” 1st ed., William Andrew, 2011. https://doi.org/10.1016/C2009-0-20355-2
5. [5] J. Seo, “A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical polishing,” J. Materials Research, Vol.36, No.1, pp. 235-257, 2021. https://doi.org/10.1557/s43578-020-00060-x
6. [6] K. Yamamura, T. Takiguchi, M. Ueda, H. Deng, A. N. Hattori, and N. Zettsu, “Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface,” CIRP Annals – Manufact. Tech., Vol.60, No.1, pp. 571-574, 2011. https://doi.org/10.1016/j.cirp.2011.03.072
7. [7] C. H. Hsieh, C. Y. Chang, Y. K. Hsiao, C. C. A. Chen, C. C. Tu, and H. C. Kuo, “Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies,” Micromachines, Vol.13, No.10, Article No.1752, 2022. https://doi.org/10.3390/mi13101752
8. [8] A. Fukuda and M. Mitarai, “Method for Slurry Flow Visualization in Polishing Pad Asperities,” J. Japan Soc. Precis. Eng., Vol.83, No.2, pp. 173-179, 2017 (in Japanese). https://doi.org/10.2493/jjspe.83.173
9. [9] N. Sumomogi, K. Kimura, P. Khajornrungruang, and K. Ueno, “Contact between Polishing Pad and Wafer in Chemical Mechanical Polishing,” Proc. of 2008 JSPE Spring Conf., Session ID: C04, pp. 183-184, 2008 (in Japanese). https://doi.org/10.11522/pscjspe.2008S.0.183.0
10. [10] M. Uneda, K. Okabe, N. Moriya, K. Shibuya, and K. Ishikawa, “Development of Evaluation Method for Geometrical Characterization of Polishing Pad Surface Texture Based on Contact Image Analysis Using Image Rotation Prism,” J. Japan Soc. Precis. Eng., Vol.77, No.9, pp. 883-888, 2011 (in Japanese). https://doi.org/10.2493/jjspe.77.883
11. [11] A. Watanabe, S. Kurokawa, T. Hayashi, N. Handa, Y. Wada, C. Takatoh, S. Shima, and H. Hiyama, “Observation of Slurry Abrasive Behavior at the Interface between CMP Polishing Pad and Substrate: Comparative Observation of Abrasive Behavior between Hard and Soft Pads,” Proc. of 2019 JSPE Spring Conf., B19, pp. 136-137, 2019 (in Japanese).
12. [12] D. Guo, G. Xie, and J. Luo, “Mechanical properties of nanoparticles: Basics and applications,” J. Phys. D. Appl. Phys., Vol.47, Article No.013001, 2014. https://doi.org/10.1088/0022-3727/47/1/013001
13. [13] M. Gauthier, S. Alvo, J. Dejeu, B. Tamadazte, P. Rougeot, and S. Régnier, “Analysis and specificities of adhesive forces between microscale and nanoscale,” IEEE Trans. Autom. Sci. Eng., Vol.10, No.3, pp. 562-570, 2013. https://doi.org/10.1109/TASE.2013.2248150
14. [14] F. Bresme and M. Oettel, “Nanoparticles at fluid interfaces,” J. Phys. Condens. Matter, Vol.19, No.41, Article No.413101, 2007. https://doi.org/10.1088/0953-8984/19/41/413101
15. [15] A. Isobe, M. Akaji, and S. Kurokawa, “Proposal of New Polishing Mechanism Based on Feret Diameter of Contact Area between Polishing Pad and Wafer,” Jpn. J. Appl. Phys., Vol.52, No.12R, Article No.126503, 2013. https://doi.org/10.7567/JJAP.52.126503
16. [16] D. Arbelaez, T. Zohdi, and D. Dornfeld, “Modeling and simulation of material removal with particulate flows,” Comput. Mech., Vol.42, pp. 749-759, 2008. https://doi.org/10.1007/s00466-008-0273-3
17. [17] E. Terrell and C. A. Higgs III, “Modeling Approach for Predicting the Abrasive Particle Motion During Chemical Mechanical Polishing,” J. Tribol., Vol.129, No.4, pp. 933-941, 2007. https://doi.org/10.1115/1.2768614
18. [18] K. Nagayama, H. Morishita, K. Kimura, K. Tanaka, P. Khajornrungruang, and Y. Inatsu, “A Computational Study on Slurry Flow between a Wafer and CMP Pad with Grooves,” F. Kimura and K. Horio (Eds.), “Towards Synthesis of Micro-/Nano-systems,” pp. 277-280, Springer London: London, 2007. https://doi.org/10.1007/1-84628-559-3_47
19. [19] Y. Idei, K. Kimura, and P. Khajornrungruang, “Observation of particle behavior in slurry in CMP process using evanescent field,” Proc. JSPE Kyushu Branch Meet in Saga 2009, 106, pp. 11-12, 2009 (in Japanese).
20. [20] K. Kimura, K. Suzuki, and P. Khajornrungruang, “Study on fine particle behavior in slurry flow between wafer and polishing pad as a material removal process in CMP,” Int. Conf. on Planarization/CMP Technology (ICPT 2012), 2012.
21. [21] P. Khajornrungruang, K. Kimura, S. Babu, and K. Suzuki, “Study on On-Machine Visualization of Surface Processing Phenomena in Nanoscale: The apparatus development,” Proc. of JSPE Semestrial Meet. 2015S, pp. 85-86, 2015 (in Japanese). https://doi.org/10.11522/pscjspe.2015A.0_85
22. [22] T. Permpatdechakul, P. Khajornrungruang, K. Suzuki, and Y. Terayama, “Development of in-situ observation apparatus for investigating the nanoparticles phenomenon on surface in CMP using evanescent field,” Proc. JSPE Kyushu Branch Meet. 2018, pp. 32-34, 2018.
23. [23] A. Blattler, P. Khajornrungruang, K. Suzuki, and T. Permpatdechakul, “Study on On-Machine Visualization of Surface Processing Phenomena in Nanoscale,” Proc. of JSPE Semestrial Meeting 2019S, pp. 459-460, 2019. https://doi.org/10.11522/pscjspe.2019S.0_459
24. [24] T. Permpatdechakul, P. Khajornrungruang, K. Suzuki, and Y. Terayama, “Experimental Evaluation of Developed Apparatus for Nano-Scale Phenomena Observation during CMP Process,” Proc. JSPE Kyushu Branch Meet 2019, pp. 37-38, 2019.
25. [25] E. Ambrose, “A surface contact microscope for the study movement,” Nature, Vol.178, p. 1194, 1956. https://doi.org/10.1038/1781194a0
26. [26] H. Chew, D. S. Wang, and M. Kerker, “Elastic scattering of evanescent electromagnetic waves,” Applied Optics, Vol.18, Issue 15, pp. 2679-2687, 1979. https://doi.org/10.1364/AO.18.002679
27. [27] D. C. Prieve, F. Luo, and F. Lanni, “Brownian motion of a hydrosol particle in a colloidal force field,” Faraday Discuss. Chem. Soc., Vol.83, pp. 297-307, 1987. https://doi.org/10.1039/DC9878300297
28. [28] S. Kawata and T. Sugiura, “Movement of micrometer-sized particles in the evanescent field of a laser beam,” Optics Letters, Vol.17, Issue 11, pp. 772-774, 1992. https://doi.org/10.1364/OL.17.000772
29. [29] D. Prieve and J. Walz, “Scattering of an evanescent surface wave by a microscopic dielectric sphere,” Appl. Opt., Vol.32, Issue 9, pp. 1629-1641, 1993. https://doi.org/10.1364/AO.32.001629
30. [30] J. Walz, “Measuring particle interactions with total internal reflection microscopy,” Curr. Opin. Colloid Interface Sci., Vol.2, pp. 600-606, 1997. https://doi.org/10.1016/S1359-0294(97)80052-0
31. [31] S. Takahashi, R. Nakajima, T. Miyoshi, Y. Takaya, and K. Takamasu, “Development of an Evanescent Light Measurement System for Si Wafer Microdefect Detection,” Key Eng. Mater., Vols.295-296, pp. 15-20, 2005. https://doi.org/10.4028/www.scientific.net/KEM.295-296.15
32. [32] L. Helden, E. Eremina, N. Riefler, C. Hertlein, C. Bechinger, Y. Eremin, and T. Wriedt, “Single-particle evanescent light scattering simulations for total internal reflection microscopy,” Applied Optics, Vol.45, Issue 28, pp. 7299-7308, 2006. https://doi.org/10.1364/AO.45.007299
33. [33] C. Zettner and M. Yoda, “Particle velocity field measurements in a near-wall flow using evanescent wave illumination,” Exp. Fluids, Vol.34, No.1, pp. 115-121, 2003. https://doi.org/10.1007/s00348-002-0541-5
34. [34] A. Blattler, P. Khajornrungruang, K. Suzuki, and T. Permpatdechakul, “High-speed three-dimensional tracking of an individual 100 nm polystyrene standard particles in multi-wavelength evanescent fields,” Meas. Sci. Technol., Vol.31, No.9, Article No.094012, 2020. https://doi.org/10.1088/1361-6501/ab87ec
35. [35] P. Khajornrungruang, K. Suzuki, and T. Inoue, “Study on non-contact micro tool tip nano-position detect by means of evanescent field penetration depth,” Proc. of the 18th Int. Conf. & Exhibition of the European Society for Precision Engineering and Nanotechnology (euspen 2018), pp. 139-140, 2018.
36. [36] M. Kildemo, “Optical properties of silicon carbide polytypes below and around bandgap,” Thin Solid Films, Vols.455-456, pp. 187-195, 2004. https://doi.org/10.1016/j.tsf.2003.11.291
37. [37] T. Ouisse, D. Chaussende, and L. Auvray, “Micropipe-induced birefringence in 6H silicon carbide,” J. Appl. Cryst., Vol.43, pp. 122-133, 2010. https://doi.org/10.1107/S0021889809043957
38. [38] M. Cheezum, W. Wand, and W. Guilford, “Quantitative comparison of algorithms for tracking single fluorescent particles,” Biophys. J., Vol.81, No.4, pp. 2378-2388, 2001. https://doi.org/10.1016/S0006-3495(01)75884-5
39. [39] A. von Diezmann, Y. Shechtman, and W. Moerner, “Three-dimensional localization of single molecules for super-resolution imaging and single-particle tracking,” Chem. Rev., Vol.117, No.11, pp. 7244-7275, 2017. https://doi.org/10.1021/acs.chemrev.6b00629
40. [40] S. Saenna, P. Khajornrungruang, A. Blattler, T. Permpatdechakul, K. Suzuki, and M. A. Bakier, “Brownian motion simulation of SiO2 abrasive nanoparticle on SiC substrate surface,” Proc. of Int. Conf. on Leading Edge Manufacturing in 21st century: LEM21, pp. 353-357, 2021. https://doi.org/10.1299/jsmelem.2021.10.178-171
41. [41] T. Permpatdechakul, P. Khajornrungruang, K. Suzuki, and S. Kutomi, “Study on a novel peeling of nano-particle (PNP) process for localized material removal on a 4H-SiC surface by controllable magnetic field,” Int. J. Automation Technol., Vol.17, No.4, pp. 410-421, 2023. https://doi.org/10.20965/ijat.2023.p0410
42. [42] T. Permpatdechakul, P. Khajornrungruang, K. Suzuki, and D. Goto, “Study on action forces on nano-particle to flat surface using localized remote magnetic field: Estimation of action forces by applying multi-wavelength evanescent field,” Proc. of JSPE Semestrial Meeting 2023S, Session ID: D29, 2023.