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IJAT Vol.8 No.4 pp. 592-597
doi: 10.20965/ijat.2014.p0592
(2014)

Paper:

Basic Properties of Fixed Abrasive Polishing by Alumina Abrasive Grain for Si Wafer – Effects of Actual Contact Area and Grain Size –

Ryunosuke Sato

Graduate school of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya-shi, Tochigi 321-8585, Japan

Received:
April 15, 2014
Accepted:
June 16, 2014
Published:
July 5, 2014
Keywords:
fixed abrasive polishing, actual contact area, pyramidal structured polishing pad, alumina abrasive, Si wafer
Abstract

To investigate basic polishing properties of fixed abrasive polishing using alumina abrasive grain for Si wafer, we used a pyramidal structured polishing pad having alumina abrasives and aqueous KOH solution as the polishing fluid. We clarified that the optimum KOH solution concentration required to get a smooth surface 5 wt% and finished surface roughness of 80nmRz. The cutting edge was hardly worn and polishing performance was maintained without dressing.

Cite this article as:
R. Sato, “Basic Properties of Fixed Abrasive Polishing by Alumina Abrasive Grain for Si Wafer – Effects of Actual Contact Area and Grain Size –,” Int. J. Automation Technol., Vol.8, No.4, pp. 592-597, 2014.
Data files:
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