Basic Properties of Fixed Abrasive Polishing by Alumina Abrasive Grain for Si Wafer – Effects of Actual Contact Area and Grain Size –
Graduate school of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya-shi, Tochigi 321-8585, Japan
To investigate basic polishing properties of fixed abrasive polishing using alumina abrasive grain for Si wafer, we used a pyramidal structured polishing pad having alumina abrasives and aqueous KOH solution as the polishing fluid. We clarified that the optimum KOH solution concentration required to get a smooth surface 5 wt% and finished surface roughness of 80nmRz. The cutting edge was hardly worn and polishing performance was maintained without dressing.
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