Paper:
Evaluation Method Applying Fourier Transform Analysis for Conditioned Polishing Pad Surface Topography
Keiichi Kimura, Panart Khajornrungruang, Takahisa Okuzono,
and Keisuke Suzuki
Department of Mechanical Information Science and Technology, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka-shi, Fukuoka 820-8502, Japan
- [1] Planarization and CMP technical Committee, JSPE et al., Planarization Technical Term Dictionary, 2004.
- [2] K. Kadomura et al., “Quantification of Pad Surface Conditions with Diamond Conditioners and Polishing Characteristics in CMP Process,” Proc. of ICPT, pp. 319-324, 2009.
- [3] M. Oshida, S. Haba, K. Yoshida, and M. Kinoshita, “New observation technique and applied research of surface roughness for silicon polishing pad,” Proc. of 2008 JSPE Spring Conf., pp. 197-198, 2008 (in Japanese).
- [4] A. Lawing, “Pad Conditioning and Pad Surface Characterization in Oxide Chemical Mechanical Polishing,” Proc. of Mat. Res. Soc. Symp., pp. I5.3.1-I5.3.6, 2002.
- [5] Planarization and CMP technical Committee, JSPE et al., “A library of CMP planarization Technology & Application,” Global Net Corp, 2006 (in Japanese).
- [6] K. Kimura, Y. Hashiyama, P. Khajornrungruang, H. Hiyama, and Y. Mochizuki, “Study on material removal phenomena in CMP process,” Proc. of ICPT, pp. 201-205, 2007.
- [7] R.White et al., “In Situ Characterization of theMechanical Aspects of CMP,” Proc. of ICPT, pp. 3-10, 2008.
- [8] M. Akaji et al., “Study of optimum polishing pad surface for CMP,” Proc. of ICPT, pp. 97-102, 2009.
- [9] E. Okamoto, K. Kimura, and P. Khajornrungruang, “Study on kinetic contact between polishing pad and wafer during CMP,” Proc. of 2010 JSPE Spring Conf., pp. 737-738, 2010 (in Japanese).
This article is published under a Creative Commons Attribution-NoDerivatives 4.0 Internationa License.