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IJAT Vol.16 No.1 pp. 52-59
doi: 10.20965/ijat.2022.p0052
(2022)

Paper:

Polishing Characteristics and Mechanism of Polishing Glass Substrate Using Suede Pad with Fine Micrometer-Sized Pores

Michio Uneda*,†, Nodoka Yamada*, and Yoshihiro Tawara**

*Kanazawa Institute of Technology
3-1 Yatsukaho, Hakusan, Ishikawa 924-0838, Japan

Corresponding author

**Hoya Corporation, Akishima, Japan

Received:
March 22, 2021
Accepted:
June 3, 2021
Published:
January 5, 2022
Keywords:
suede polishing pad with fine pores, glass substrate, chemical mechanical polishing, removal rate, pad surface asperities
Abstract

Chemical mechanical polishing (CMP) using a suede polishing pad is an essential fabrication process for glass substrates that require ultra-high planarization. However, the effect of surface asperities of the suede pad on its polishing characteristics is not completely understood because the structure of the suede pad in the thickness direction is not constant, and its surface asperities can easily change during the pad conditioning or marathon polishing processes. In addition, many previous studies have discussed the polishing mechanism using a suede pad; however, these studies used suede pads with a pore size of approximately 100 μm. This paper discusses the polishing characteristics of a suede pad with fine micrometer-sized pores by clarifying the relationships between the removal rate, friction coefficient, pore parameters, and roughness as the pad surface asperities. In this study, a series of marathon polishing tests were performed with and without conditioning. It was discovered that the removal rate was affected not only by the pore parameters but also by the surface roughness of the suede pad with fine pores. The relationship between the removal rate and the friction coefficient changed owing to the influence of pad conditioning, and this change is significant when the break-in conditioning time is short.

Cite this article as:
M. Uneda, N. Yamada, and Y. Tawara, “Polishing Characteristics and Mechanism of Polishing Glass Substrate Using Suede Pad with Fine Micrometer-Sized Pores,” Int. J. Automation Technol., Vol.16 No.1, pp. 52-59, 2022.
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References
  1. [1] M. Tsujimura, “Enhanced open innovation: CMP innovation to open new paradigm,” ECS J. of Solid State Science and Technology, Vol.8, No.5, pp. 3098-3105, 2019.
  2. [2] D. Reinsei, J. Gants, and J. Rydning, “The Digitization of the world from edge to core,” An IDC White Paper, 2018.
  3. [3] S. Kurokawa, T. K. Doi, C. Wang, Y. Sano, H. Aida, K. Oyama, and K. Takahashi, “Approach to high efficient CMP for power device substrates,” ECS Trans., Vol.60, No.1, pp. 641-646, 2014.
  4. [4] T. Doi, “Next-generation, super-hard-to-process substrates and their high-efficiency machining process technologies used to create innovative devices,” Int. J. Automation Technol., Vol.12, No.2, pp. 145-153, 2018.
  5. [5] E. Miyashita, O. Kawamae, A. Musha, and T. Muroi, “Trend of data storage device and technology,” The J. of the Institute of Image Information and Television Engineers, Vol.71, No.3, pp. 345-352, 2017.
  6. [6] A. Isobe, “Technology trend of polishing pad for CMP,” J. of the Japan Society for Precision Engineering, Vol.78, No.11, pp. 937-940, 2012.
  7. [7] T. Naito, M. Sato, U. Satake, K. Hirose, and T. Enomoto, “Improvement of finishing efficiency considering contact behavior of polishing pad with workpiece surface,” Trans. of the Japan Society of Mechanical Engineers, C, Vol.77, No.783, pp. 4308-4317, 2011.
  8. [8] M. Uneda, K. Takano, M. Sakamoto, K. Koyama, H. Aida, and K. Ishikawa, “Chemical mechanical polishing mechanism of hard-to-process materials using suede type polishing pad – Effect of pad surface pores on removal rate and its stability –,” J. of the Japan Society for Precision Engineering, Vol.82, No.7, pp. 703-708, 2016.
  9. [9] Y. Kitai, J. Murata, Y. Tani, and Y. Zhang, “Improved polishing performance for glass by a novel suede pad utilizing epoxy resin,” Trans. of the Japan Society of Mechanical Engineers, Series C, Vol.79, No.808, pp. 5019-5028, 2013.
  10. [10] S. Han, H. J. Kim, M. K. Hong, B. H. Kwon, K. Lee, and Y. Ko, “Effect of pad surface roughness on material removal rate in chemical mechanical polishing using ultrafine colloidal ceria slurry,” Electronic Materials Letters, Vol.9, No.2, pp. 155-159, 2013.
  11. [11] Y. Zhao and L. Chang, “A micro-contact and wear model for chemical-mechanical polishing of silicon wafers,” Wear, Vol.252, pp. 220-226, 2002.
  12. [12] U. Satake, T. Enomoto, T. Miyagawa, T. Ohsumi, H. Nakagawa, and K. Funabashi, “Stabilization of removal rate in small tool polishing of glass lenses,” Int. J. Automation Technol., Vol.13, No.2, pp. 221-229, 2019.
  13. [13] J. A. Levert, C. S. Korach, B. Mooney, and F. Lynam, “Model of particle contact area for friction in oxide chemical mechanical polishing,” ECS J. of Solid State Science and Technology, Vol.8, No.12, pp. 787-793, 2019.

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Last updated on Apr. 22, 2024