IJAT Vol.13 No.6 pp. 756-764
doi: 10.20965/ijat.2019.p0756


Concentric Mutual Lapping to Improve Sliding Surface Function of SiC Ceramics

Hiroyuki Kodama, Hayato Koyama, Tomoaki Ishii, Yusuke Tanimoto, and Kazuhito Ohashi

Graduate School of Natural Science and Technology, Okayama University
3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan

Corresponding author

March 25, 2019
August 30, 2019
November 5, 2019
silicon carbide, lapped surface function, concentric mutual lapping

Ring-shaped SiC ceramics used in sliding components were examined herein. Conventional lapping generates many shallow scratches in random directions in the surface of such SiC ceramics, and these starches extend from the inner circumference of the surface to its perimeter. The scratches affect the ability of the surface to prevent liquid from escaping from the perimeter side to the inner-circumference side of the SiC ring, and they can increase the friction force of the finished surface as a sliding material. We propose concentric mutual lapping to remove the scratches caused by conventional lapping. The surface topography of a SiC ring is evaluated quantitatively using a white light interferometer, and a vector and quantitative analysis of the surface profile is proposed. The results show that concentric mutual lapping can quickly remove the scratches caused by conventional lapping, and subsequently, circumferential scratches are generated along the lapping direction. We have also conducted sliding tests to analyze the effect of surface topography on the surface function as a sliding material. The results reveal that concentric mutual lapping suppresses the differences in surface function that occurred depending on the sliding direction.

Cite this article as:
Hiroyuki Kodama, Hayato Koyama, Tomoaki Ishii, Yusuke Tanimoto, and Kazuhito Ohashi, “Concentric Mutual Lapping to Improve Sliding Surface Function of SiC Ceramics,” Int. J. Automation Technol., Vol.13, No.6, pp. 756-764, 2019.
Data files:
  1. [1] R. Mahdavinejad, M. Tolouei-Rad, and H. Sharifi Bidgoli, “Heat Transfer Analysis of EDM Process on Silicon Car-Bide,” Int. J. of Numerical Methods for Heat and Fluid Flow, Vol.15, No.5, pp. 483-502, 2005.
  2. [2] S. Goel, X. Luo, R. L. Reuben, W. B. Rashid, and J. Sun, “Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study,” Key Engineering Materials, Vol.496, pp. 150-155, 2012.
  3. [3] S. Agarwal and P. V. Rao, “Grinding Characteristics, Material Removal and Damage Formation Mechanisms in High Removal Rate Grinding of Silicon Carbide,” Int. J. of Machine Tools and Manufacture, Vol.50, No.12, pp. 1077-1087, 2010.
  4. [4] Y. Aono, S. Ando, and A. Hirata, “Microtribological Modification of Silicon Carbide Surface by Laser Irradiation,” Precision Engineering, Vol.43, pp. 270-276, 2016.
  5. [5] K. Ding, Y. Fu, H. Su, X. Gong, and K. Wu, “Wear of Diamond Grinding Wheel in Ultrasonic Vibration-Assisted Grinding of Silicon Carbide,” The Int. J. of Advanced Manufacturing Technology, Vol.71, Nos.9-12, pp. 1929-1938, 2014.
  6. [6] S. Goel, X. Luo, P. Comley, R. L. Reuben, and A. Cox, “Brittle-ductile Transition During Diamond Turning of Single Crystal Silicon Carbide,” Int. J. of Machine Tools and Manufacture, Vol.65, pp. 15-21, 2013.
  7. [7] H. Huang, Y. Zhang, and X. Xu, “Experimental Investigation on the Machining Characteristics of Single-Crystal SiC Sawing with the Fixed Diamond Wire,” The Int. J. of Advanced Manufacturing Technology, Nos.5-8, pp. 955-965, 2015.
  8. [8] G. Roewer, U. Herzog, K. Trommer, E. Müller, and S. Frühauf, “Silicon Carbide – A Survey of Synthetic Approaches, Properties and Applications,” Structure and Bonding, Vol.101, pp. 59-135, 2002.
  9. [9] B. V. Manoj Kumar, Y.-W. Kim, D.-S. Lim, and W.-S. Seo, “Influence of Small Amount of Sintering Additives on Unlubricated Sliding Wear Properties of SiC Ceramics,” Ceramics Int., Vol.37, No.8, pp. 3599-3608, 2011.
  10. [10] N. P. Padture, “In Situ-Toughened Silicon Carbide,” J. of the American Ceramic Society, Vol.77, No.2, pp. 519-523, 1994.
  11. [11] P. Andersson and A. Blomberg, “Instability in the Tribochemical Wear of Silicon Carbide in Unlubricated Sliding Contacts,” Wear, Vol.174, Nos.1-2, pp. 1-7, 1994.
  12. [12] R. Ji, Y. Liu, Y. Zhang, X. Dong, Z. Chen, and B. Cai, “Experimental research on machining characteristics of SiC ceramic with end electric discharge milling,” J. of Mechanical Science and Technology, Vol.25, No.6, pp. 1535-1542, 2011.
  13. [13] R. Ji, Y. Liu, Y. Zhang, B. Cai, J. Ma, and X. Li, “Influence of dielectric and machining parameters on the process performance for electric discharge milling of SiC ceramic,” The Int. J. of Advanced Manufacturing Technology, Vol.59, Nos.1-4, pp. 127-136, 2012.
  14. [14] K. Katahira, H. Ohmori, S. Takesue, J. Komotori, and K. Yamazaki, “Effect of atmospheric-pressure plasma jet on polycrystalline diamond micro-milling of silicon carbide,” CIRP Annals – Manufacturing Technology, Vol.64, No.1, pp. 129-132, 2015.
  15. [15] A. Kubota, Y. Shinbayashi, H. Mimura, Y. Sano, K. Inagaki, Y. Mori, and K. Yamauchi, “Investigation of the Surface Removal Process of Silicon Carbide in Elastic Emission Machining,” J. of Electronic Materials, Vol.36, No.1, pp. 92-97, 2007.
  16. [16] Y. Sano, M. Watanabe, T. Kato, K. Yamamura, H. Mimura, and K. Yamauchi, “Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide,” Materials Science Forum, Vols.600-603, pp. 847-850, 2009.
  17. [17] Z. Zhang, J. Yan, and T. Kuriyagawa, “Study on Tool Wear Characteristics in Diamond Turning of Reaction-Bonded Silicon Carbide,” Int. J. of Advanced Manufacturing Technology, Vol.57, pp. 117-125, 2011.
  18. [18] J. Yan, Z. Zhang, and T. Kuriyagawa, “Mechanism for material removal in diamond turning of reaction-bonded silicon carbide,” Int. J. of Machine Tools and Manufacture, Vol.49, No.5, pp. 366-374, 2009.
  19. [19] T. Nakajima and N. Narutaki, “Machining Technology,” CORONA PUBLISHING, pp. 209-210, 1983 (in Japanese).
  20. [20] K. Yamaguchi, M. Touge, A. Kubota, T. Nakano, and J. Watanabe, “Study on High Efficiency Mirror Finished Technique of Single-crystal SiC Substrate – The Planarization Process by Constant-Pressure Grinding and an Ultraviolet Irradiation Assisted Polishing –,” J. of the Japan Society for Precision Engineering, Vol.77, No.1, pp. 116-120, 2011 (in Japanese).
  21. [21] T. Ishii, K. Ohashi, H. Yamaguchi, and S. Tsukamoto, “C18 Investigation in evaluation of functional surface of sintered SiC finished by lapping,” Proc. of the Manufacturing & Machine Tool Conf., Vol.10, pp. 163-164, 2014 (in Japanese).

*This site is desgined based on HTML5 and CSS3 for modern browsers, e.g. Chrome, Firefox, Safari, Edge, Opera.

Last updated on Jan. 19, 2021