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IJAT Vol.12 No.2 pp. 145-153
doi: 10.20965/ijat.2018.p0145
(2018)

Review:

Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices

Toshiro Doi

Global Innovation Center, Kyushu University
6-1 Kasuga-koen, Kasuga-city, Fukuoka 816-8580, Japan

Corresponding author

Received:
December 5, 2017
Accepted:
December 25, 2017
Online released:
March 1, 2018
Published:
March 5, 2018
Keywords:
SiC, GaN and diamond substrates, dilatancy pad, high pressure & rotational polishing machine, plasma fusion CMP, singularity
Abstract

SiC, GaN, and diamond are known as super-hard-to-process substrate for next-generation green devices. In this paper, we report on some breakthrough in developing highly efficient processing for such hard-to-process materials, for which we propose improvements in conventional processing, and innovative processing. As part of our project, we developed a “dilatancy pad®” that can efficiently produce high-quality surfaces as well as a high-rigidity, high-speed and high-pressure processing machine. We also designed and prototyped “plasma fusion CMP®,” which is an innovative processing technology fusing CMP (Chemical Mechanical Polishing) with P-CVM (Plasma Chemical Vaporization Machining) to machine super-hard diamond substrates that are considered indispensable for future devices. Before the advent of “singularities” by 2045, super-hard-to-process substrates and ultra-precision polishing technology will become more and more essential.

Cite this article as:
T. Doi, “Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices,” Int. J. Automation Technol., Vol.12, No.2, pp. 145-153, 2018.
Data files:
References
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Last updated on Dec. 18, 2018