Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices
Global Innovation Center, Kyushu University
6-1 Kasuga-koen, Kasuga-city, Fukuoka 816-8580, Japan
SiC, GaN, and diamond are known as super-hard-to-process substrate for next-generation green devices. In this paper, we report on some breakthrough in developing highly efficient processing for such hard-to-process materials, for which we propose improvements in conventional processing, and innovative processing. As part of our project, we developed a “dilatancy pad®” that can efficiently produce high-quality surfaces as well as a high-rigidity, high-speed and high-pressure processing machine. We also designed and prototyped “plasma fusion CMP®,” which is an innovative processing technology fusing CMP (Chemical Mechanical Polishing) with P-CVM (Plasma Chemical Vaporization Machining) to machine super-hard diamond substrates that are considered indispensable for future devices. Before the advent of “singularities” by 2045, super-hard-to-process substrates and ultra-precision polishing technology will become more and more essential.
-  I. Akasaki and H. Matsunami (Eds.), “Wade gap Semiconductors,” Baifukan, 2013 (in Japanese).
-  T. Doi, K. Seshimo et al., “Building of super high-efficiency technology based on innovative concept (Establishment of effective polishing process of SiC substrate using Dilatancy pad tool with bowl feed method),” Trans. of the JSME, Vol.81, No.824, pp. 1-12, 2015 (in Japanese).
-  T. Doi, K. Seshimo et al., “Smart polishing of hard-to-machine materials with an innovative dilatancy pad under high-pressure, high-speed, immersed condition,” ECS J. S.S Sci. and Tec., Vol.5, No.10, pp. 598-607, 2016.
-  T. K. Doi, “Open innovation for a brighter future,” Nature, naturejobs13, March 21, 2013.
-  K. Shiozawa, Y. Sano, T. Doi, S. Kurokawa, H. Aida et al., “Development of the innovative CMP/P-CVM combined appatus (2nd report) – Basic A-type and its processing characteristic –,” Proc. of the fall meeting of JSPE, p. 273, 2014 (in Japanese).
-  T. Doi, Y. Sano, S. Kurokawa, H. Aida et al., “Study of a highly efficient precision processing for hard-to-process materials (1st report) – Proposal of a polishing process with new concepts –,” Proc. of the spring meeting of JSPE, p. 639, 2013 (in Japanese).
-  T. Karaki-Doy, “Colloidal Silica Polishing Based on Micromechanical Removal Action and Its Applications,” Sensors and Materials, Vol.3, pp. 153-167, 1988.
-  H. Nishizawa, T. K. Doi et al., “Study on innovative plasma fusion CMP and its application to processing of diamond substrate,” Proc. of ICPT2015, p. 298, 2015.
-  H. Takeda, T. Doi et al., “High efficiency processing and its processing mechanism of large area diamond substrate due to plasma fusion CMP,” The Institute of Electronics, Information & Communication Engineers, IEICE Technical Report, pp. 1-6, 2017 (in Japanese).
-  T. Doi, “Dreaming of manufacturing technology and the progress,” Optical & Electro-Optical Engineering Contact, Vol.55, No.1, pp. 16-25, 2017 (in Japanese).
-  T. Doi et al., “High efficiency manufacturing processing technology of hard-process-materials for green devices and innovative bonding technologies,” Monthly Tribology, Vol.30, No.11, pp. 14-16, 2016 (in Japanese).
-  T. Doi, “The relationship between the information revolution/Singularity and the semiconductor processing technology,” Monthly Tribology, Vol.31, No.11, p. 1, 2017 (in Japanese).
-  T. Doi, “Industry-academia-government collaborations aiming to establish ultra-precision processing and its applications – Potentiality of the evolution toward singularity-focused innovation –,” J. of the Japan Society for Precision Engineering, Vol.84, No.1, pp. 22-26, 2018 (in Japanese).