Simulation of Dislocation Accumulation in Impurity Doped-ULSI Cells and Electric Characteristic Evaluations
Michihiro Sato*,† and Yosuke Takahashi**
*Department of Mechanical Engineering, Kitami Institute of Technology
165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
1-7-2 Otemachi, Chiyoda-ku, Tokyo 100-0004, Japan
The performance of semiconductor devices has improved on introducing increasing refinements to the structures of these devices. This has created various problems at the atomic level. In particular, the presence of dislocations, a type of crystallographic defect, within semiconductor devices poses a major problem. Dislocations accumulated within the device obstruct the movement of electrons and adversely affect the electrical characteristics of the device. However, previous investigations have not sufficiently clarified the relationship between accumulated dislocations and the electrical characteristics of a semiconductor. In this study, we focus on dislocations produced in the fabrication of an impurity-doped ultra-large-scale integration (ULSI) device and, based on a crystal plasticity analysis, perform a simulation of the accumulation of dislocations within the device during the cooling process. We establish an analytical system by which the obtained information on dislocations is applied to a device simulator, in order to evaluate the electrical characteristics by considering the accumulation of dislocations. We investigate the effects that dislocation density and density distribution have on the characteristic current-voltage curve of the device.
-  T. Ohashi, M. Sato, T. Maruizumi, and I. Kitagawa, “Simulation of dislocation accumulation in ULSI cells with STI structure,” Applied Surface Science, Vol.216, pp. 340-346, 2003.
-  M. Sato, T. Ohashi, T. Maruizumi, and I. Kitagawa, “Crystal plasticity analysis of thermal deformation and dislocation accumulation in ULSI cells,” Key Engineering Materials, Vol.324-325, pp. 1035-1038, 2006.
-  M. Sato, T. Ohashi, T. Maruizumi and I. Kitagawa, “Crystal plasticity analysis of dislocation accumulation in ULSI cells with consideration of temperature dependence of the lattice friction stress for silicon,” Key Engineering Materials, Vol.340-341, pp. 199-204, 2007.
-  M. Sato, T. Ohashi, T. Maruizumi, and I. Kitagawa, “Crystal plasticity analysis of dislocation accumulation in impurity doped-ULSI cells,” Trans. of the Japan Society of Mechanical Engineers, Series A, Vol.75, No.756, pp. 121-126, 2009 (in Japanese).
-  M. Sato, T. Ohashi, T. Maruizumi, and I. Kitagawa, “Simulation of dislocation accumulation in ULSI cells of reduced gate length,” Materials Science Forum, Vol.654-656, pp. 1682-1685, 2010.
-  I. Yonenaga, T. Taishi, X. Huang, and K. Hoshikawa, “Dynamic characteristics of dislocations in Ge-doped and (Ge+B) codoped silicon,” J. of Applied Physics, Vol.93, No.1, pp. 265-269, 2003.
-  M. F. Ashby, “The Deformation of Plastically Non-homogeneous Materials,” Philosophical Magazine, Vol.21, pp. 399-424, 1970.
-  T. Ohashi, “Finite-element analysis of plastic slip and evolution of geometrical necessary dislocations in Fcc crystals,” Philosophical Magazine Letters, Vol.75, pp. 51-57, 1997.
-  T. Ohashi, “Crystal plasticity analysis of dislocation emission from micro voids,” Int. J. Plasticity, Vol.21, pp. 2071-2088, 2005.
-  T. Ohashi, “Suppression of dislocation accumulation in GaAs film on Si substrate by combination of impurity doping and selective area growth,” J. of Materials Research, Vol.7, No.11, pp. 3032-3038, 1992.
-  Semiconductors Handbook Compilation Committee, “Semiconductors Handbook, revised edition,” p. 135, Ohm-sha Publishing, 1977 (in Japanese).
-  EMIS data reviews series, No.4, “Properties of Silicon,” p. 22, An INSPEC publication, 1988.
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