single-au.php

IJAT Vol.8 No.4 pp. 576-583
doi: 10.20965/ijat.2014.p0576
(2014)

Paper:

Statistical Analysis for Evaluating Surface Roughness of Plane Honing

Keita Shimada, Chung-I Kuo, Masayoshi Mizutani,
and Tsunemoto Kuriyagawa

Department of Mechanical Systems and Design, Graduate School of Engineering, Tohoku University, 6-6-01 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

Received:
April 7, 2014
Accepted:
June 2, 2014
Published:
July 5, 2014
Keywords:
plane honing, fixed abrasive technology, statistical approach, surface roughness
Abstract
Recently, fixed abrasive technologies have been needed to solve some problems with free abrasive technologies, such as processing efficiency and environmental pollution. Plane honing is one effective fixed abrasive technology for processing wafer-like materials. Advantages of plane honing include a high processing rate, slurry waste-free process, and high finishing accuracy. The paper presents a method to simulate the plane honing process based on statistical analysis of a grinding process. One of the most significant differences between grinding and plane honing is process controlling method: the former is positioncontrolled, whereas the latter is pressure-controlled processes. In order to treat a pressure-controlled process, the amount of material removed from each segment was assumed to be constant based on Preston’s law, which is the most common principle for material removal in the polishing process. Reference curves of a segment were introduced to map tip points of abrasive grains contained in the segment. The reference curve can be compared with the surface curve of the workpiece to determine the material to be removed; repeating the comparison allows the plane honing process to be simulated. Plane honing experiments were conducted, and the results agreed qualitatively with the simulation results.
Cite this article as:
K. Shimada, C. Kuo, M. Mizutani, and T. Kuriyagawa, “Statistical Analysis for Evaluating Surface Roughness of Plane Honing,” Int. J. Automation Technol., Vol.8 No.4, pp. 576-583, 2014.
Data files:
References
  1. [1] K. Takahashi, “Wide-gap semiconductors for optoelectronics devices,” Morikita Publishing, 250-281, 2006. (in Japanese)
  2. [2] H. Okumura, “Innovation of Power Electronics by Widegap Semiconductors,” The Institute of Electronics, Information and Communication Engineers, Vol.93, No.11, pp. 958-963, 2010.
  3. [3] H. Aida, T. Doi, H. Takeda, H. Katakura, S. Kim, K. Koyama, T. Yamazaki, and M. Uneda, “Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials,” Current Applied Physics, Vol.12, pp. S41-S46, 2012.
  4. [4] H. Okumura, “Present status and future prospect of widegap semiconductor high-power devices,” Jpn. J. Appl. Phys., 45, 7565e7586, 2006.
  5. [5] T. Kimoto, K. Fujihira, H. Shiomi, and H. Matsunami, “Highvoltage 4HeSiC Schottky barrier diodes fabricated on (03-38) with closed micropipes,” Jpn. J. Appl. Phys., Vol.42, L13-L16, 2003.
  6. [6] O. Taki, “Grinding and polishing technology of Sapphire, SiC and MEMS wafer,” THE CHEMICAL TIMES, Vol.227, No.1, pp. 3-7, 2013.
  7. [7] N. Yasunaga, “The latest trend of advanced fixed abrasive finishing methods,” J. of the Japan Society of Grinding Engineers, Vol.53, No.7, pp. 401-404.
  8. [8] D. J. Whitehouse, “Handbook of Surface and Nanometrology (Second edition),” 523-524, 2011.
  9. [9] L. E. A. Sanchez, N. Z. X. Jun, and A. A. Fiocchi, “Surface finishing of flat pieces when submitted to lapping kinematics on abrasive disc dressed under several overlap factors,” Prec. Eng., Vol.35, pp. 355-363, 2011.
  10. [10] S. Matsui and S. Nakazato, “Superfinishing process and its princple,” Yokendo Co., Ltd., 5-7, 1965.
  11. [11] M. Higuchi, T. Yamaguchi, N. Furushiro, T. Sugimoto, S. Shimada, N.Matsumori, and H. Ogura, “Development of superabrasive stone for mechanochemical superfinishing,” Precision Engineering, Vol.33, pp. 65-70, 2009.
  12. [12] Japan Society of Mechanical Engineers (Ed.), “Manufacturing Processes I 2nd Edition,” 77-79, 2008. (in Japanese)
  13. [13] O. Yokota, M. Aoyama, S. Shimizu, T. Inoue, Y. Kasuga, O. Saitou, A. Saitou, and S. Kawamori, “Material processing method from the foundation,” 56-57, 2009. (in Japanese)
  14. [14] S. Okuyama, A. Une, A. Yui, and H. Suzuki, “Basic of machining science,” 211-212, 2013. (in Japanese)
  15. [15] T. Kuriyagawa, K. Nishihara, S. Suzuki, Y. Guo, and K. Syoji, “Improvement of Machined Surface Quality in Ultra-Precision Plane Honing,” Key Engineering Materials, 238-239, 237, 2003.
  16. [16] S. Suzuki, N. Yoshihara, and T. Kuriyagawa, “Improvement of Machined Surface Flatness in Ultra-Precision Plane Honing,” Key Engineering Materials, 291-292, 359-364, 2005.
  17. [17] K. Syoji, “Study on Grinding Technology 2nd Edition,” Yokendo Co., Ltd., 46-71, 2008. (in Japanese)
  18. [18] N. Yoshihara, J. Yan, and T. Kuriyagawa, “Effect of Grain Cutting Direction for Ground Surface Roughness – Study on Nonaxisymmetric Aspherical Grinding –,” J. Jpn. Soc. Prec. Eng., Vol.76, No.7, pp. 781-785, 2010. (in Japanese)
  19. [19] H. Yoshikawa and T. Sata, “Process of Bond Fracture in Grinding Wheel,” 26, 308, 529-534, 1960. (in Japanese)
  20. [20] T. Yamada, H. S. Lee, and K. Miura, “Quantitative estimation of abrasive grain behavior and elastic recovery of workpiece in grinding operation,” J. Jpn Soc. Grinding Eng., Vol.55, No.12, pp. 723-728, 2011. (in Japanese).
  21. [21] H. Mizutani, S. Yamamoto, and M. Ieki, “Wear processes of diamond stone in honing of fine ceramics,” J. Jpn Soc. Grinding Eng., Vol.50, No.1, 25-29, 2006. (in Japanese)
  22. [22] E. Aoyama, T. Hirogaki, Y. Onichi, K. Yanagitani, and N. Kawabata, “The Research on Abrasive Grain Falling in the Superfinishing Process by CBN Stone,” Jpn Soc. Mech. Eng., Vol.68, No.667, pp. 980-986, 2002. (in Japanese)

*This site is desgined based on HTML5 and CSS3 for modern browsers, e.g. Chrome, Firefox, Safari, Edge, Opera.

Last updated on Apr. 18, 2024